| PART |
Description |
Maker |
| SF58 SF59 SF57 SF510 |
POWER RECTIFIERS(5.0A500-1000V)
POWER RECTIFIERS(5.0A /500-1000V)
POWER RECTIFIERS(5.0A,500-1000V) 大功率整流器.0a500 - 1000V交流
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| SBTC-2-10 SBTC-2-10_10L SBTC-2-10L SBTC-2-1010L |
Power Splitter/Combiners 2 Way-0??50蟹 5 to 1000 MHz
Power Splitter/Combiners 2 Way-050з 5 to 1000 MHz
Power Splitter/Combiners 2 Way-0° 50 5 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 5 to 1000 MHz
From old datasheet system
Power Splitter/Combiners 2 Way-0 50 5 to 1000 MHz
|
MINI[Mini-Circuits]
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| SF47 SF49 SF48 SF410 |
POWER RECTIFIERS(4.0A,500-1000V)
POWER RECTIFIERS(4.0A500-1000V)
POWER RECTIFIERS(4.0A /500-1000V)
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
|
| ZFSC-2-4 |
Power Splitter/Combiner 2 Way-0 50楼? 0.2 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 0.2 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 0.2 to 1000 MHz
|
Mini-Circuits
|
| ZFSC-2-2 |
Power Splitter/Combiner 2 Way-0 50楼? 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50惟 10 to 1000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 10 to 1000 MHz
|
Mini-Circuits
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
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